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INCHANGE Semiconductor isc Product Specification 2SA808 isc Silicon PNP Power Transistor DESCRIPTION *High Power Dissipation: PC= 50W(Max.)@TC=25 *Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min.) APPLICATIONS *Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature -3 A PC 50 W Tj 150 Tstg Storage Temperature -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification 2SA808 isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;IB= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -1.0 mA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -1.0 mA hFE DC Current Gain IC= -3A; VCE= -4V 20 fT Current-Gain--Bandwidth Product IE= 0.5A; VCE= -12V 10 MHz Switching times tr Rise Time IC= -3A ,RL= 3, VCC= -10V IB1= -0.3A; IB2= 50mA 1.2 s tstg Storage Time 1.8 s tf Fall Time 0.3 s isc Websitewww.iscsemi.cn |
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